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Influence of layer thickness on nucleation in amorphous silicon thin filmsROORDA, S; KAMMANN, D; SINKE, W. C et al.Materials letters (General ed.). 1990, Vol 9, Num 7-8, pp 259-262, issn 0167-577XArticle

Annealing mechanisms of divacancies in siliconPOIRIER, R; AVALOS, V; DANNEFAER, S et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 609-612, issn 0921-4526, 4 p.Conference Paper

Point defect populations in amorphous and crystalline siliconROORDA, S; POATE, J. M; JACOBSON, D. C et al.Solid state communications. 1990, Vol 75, Num 3, pp 197-200, issn 0038-1098, 4 p.Article

Pulsed laser oxidation and nitridation of metal surfaces immersed in liquid media = Nitruration et oxydation par laser pulsé de surfaces métalliques immergées dans un milieu liquideOGALE, S. B; POLMAN, A; QUANTIN, F. O. P et al.Applied physics letters. 1987, Vol 50, Num 3, pp 138-140, issn 0003-6951Article

Elongation of gold nanoparticles by swift heavy ion irradiation: Surface plasmon resonance shift dependence on the electronic stopping powerHARKATI KERBOUA, C; LAMARRE, J.-M; CHICOINE, M et al.Thin solid films. 2013, Vol 527, pp 186-192, issn 0040-6090, 7 p.Article

Dependence of the structural relaxation of amorphous silicon on implantation temperatureMERCURE, J.-F; KARMOUCH, R; ANAHORY, Y et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 13, pp 134208.1-134205.7, issn 1098-0121Article

Optical and microstructural properties of nanocomposite Au/SiO₂ films containing particles deformed by heavy ion irradiationLAMARRE, J.-M; YU, Z; HARKATI, C et al.Thin solid films. 2005, Vol 479, Num 1-2, pp 232-237, issn 0040-6090, 6 p.Article

Calorimetric evidence for structural relaxation in amorphous siliconROORDA, S; DOORN, S; SINKE, W. C et al.Physical review letters. 1989, Vol 62, Num 16, pp 1880-1883, issn 0031-9007Article

Transient structural relaxation of amorphous siliconSINKE, W; WARABISAKO, T; MIYAO, M et al.Journal of non-crystalline solids. 1988, Vol 99, Num 2-3, pp 308-323, issn 0022-3093Article

Order and disorder in edge-supported pure amorphous Si and pure amorphous Si on Si(001)XIE, R; LONG, G. G; WEIGAND, S. J et al.Journal of non-crystalline solids. 2011, Vol 357, Num 14, pp 2498-2501, issn 0022-3093, 4 p.Conference Paper

Role of implantation temperature on residual damage in ion-implanted 6H-SiCHELIOU, R; BREBNER, J. L; ROORDA, S et al.Semiconductor science and technology. 2001, Vol 16, Num 10, pp 836-843, issn 0268-1242Article

Structural defects and hydrogen clustering in amorphous siliconACCO, S; WILLIAMSON, D. L; ROORDA, S et al.Journal of non-crystalline solids. 1998, Vol 227-30, pp 128-132, issn 0022-3093, aConference Paper

Density of amorphous Si_xGe_1-x alloys prepared by high-energy ion implantationLAAZIRI, K; ROORDA, S; BARIBEAU, J. M et al.Journal of non-crystalline solids. 1995, Vol 191, Num 1-2, pp 193-199, issn 0022-3093Article

gettering in polycrystalline silicon solar cellsVERHOEF, L. A; MICHIELS, P-P; ROORDA, S et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1990, Vol 7, Num 1-2, pp 49-62, issn 0921-5107Article

Nitridation of iron by pulsed excimer laser treatment under liquid ammonia: Mössbauer spectroscopic study = Nitruration du fer par traitement au laser excimer pulsé sous ammoniac liquide: étude par spectrométrie MössbauerOGALE, S. B; PATIL, P. P; ROORDA, S et al.Applied physics letters. 1987, Vol 50, Num 25, pp 1802-1804, issn 0003-6951Article